Author:
Beck S.E.,Gilicinski A.G.,Felker B.S.,Langan J.G.,Bohling D.A.,George M.A.,Tvankovits J.C.,Rynders R.M.
Abstract
ABSTRACTThis study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (HFAC). A thin silicon nitride film forms on the silicon surface as a result of exposure to the HMDS process and is attributed to the H2/N2 plasma treatment used in the first step of the process.
Publisher
Springer Science and Business Media LLC