A study of temperature and pressure induced structural and electronic changes in SbCl5 intercalated graphite: Part IV. The basal plane resistivity

Abstract

Using an inductive technique, we have measured the in-plane resistivity ρa of stages 2, 4, 5, and 8 SbCl5-GIC's versus temperature T and pressure p in the ranges 130–300 K and 0–0.85 GPa. The room temperature values of ρa range from 4.0 μΩcm for the stages 5 sample to 7.7 μΩcm for the stage 8 sample. At all pressures, ρa shows a metallic temperature dependence ρa ∼ Tα, with 1 ≤ a ≤ 2, but in contrast to the c-axis resistivity ρc, it depends only very weakly on pressure and/or intercalate structural order. We show that the behavior observed is consistent with a band conduction model.