Effects of Mechanical Strain on Amorphous Silicon Thin-Film Transistors

Abstract

AbstractWe evaluated a-Si:H TFTs fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. All experiments confirmed that the on-current and hence the electron linear mobility depend on strain å as μ = μ0 (1 + 26·ε), where tensile strain has a positive sign. Upon the application of stress the mobility changes instantly and then remains unchanged in measurements up to 40 hours. In the majority of the TFTs the off-current and leakage current do not change. In tension, the TFTs fail mechanically at a strain of ∼ 3x10-2 but recover if the strain is released ‘immediately’.