Author:
Sterzel Jürgen,Blecher Frank,Hillebrand Matthias,Schneider Bernd,Böhm Markus
Abstract
AbstractTFA technology, using ASICs coated with amorphous silicon based photo detectors, opens new applications for CMOS image sensors. One particular field of interest is the detection of low light level images with pixel photocurrents in the femtoampere range and below. In this paper we describe the effects of the capacitances on the pixel amplifier, we derive noise values for the detector and the amplifier, and we estimate the gain fixed pattern noise level. An inverter circuit providing a 40-fold increase of the charge conversion gain is presented.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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