Author:
Sun Y. Q.,Hazzledine P. M.,Dimiduk D. M.
Abstract
ABSTRACTThis paper reports experiments in which in situ electrical resistivity measurements were used to monitor the formation of dislocations in initially dislocation-free NiAl single crystals. The electrical resistivity is found to exhibit an abrupt jump at the onset of plastic yielding. This is interpreted to result from an abrupt nucleation of a massive density of dislocations at the yield point.
Publisher
Springer Science and Business Media LLC
Reference11 articles.
1. The electrical resistivity of dislocations
2. 11. Sun Y.Q. , Hazzledine P.M. and Dimiduk D.M. , MRS Symposium on Phase Transformations and Systems Driven Far from Equilibrium, 1997 MRS Fall Meeting (to be published).
3. Mechanical properties of thin films
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