Author:
Affolter K.,Kattelus H.,Nicolet M-A.
Abstract
ABSTRACTThin films of W-N alloys have been prepared by reactive rf sputtering from a W target. Alloy compositions up to about 65at.%N, amorphous phases are formed with crystallization temperatures up to above 600°C. All the films gradually release N upon vacuum annealing and decompose into αW between 700 and 800°C in vacuo. Application of W-N alloys as diffusion barriers in a Si metallization scheme is discussed.
Publisher
Springer Science and Business Media LLC
Cited by
27 articles.
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