Growth of Co-evaporated Cu(In,Ga)Se2 – The Influence of Rate Profiles on Film Morphology-Reference-Cited by-同舟云学术

Growth of Co-evaporated Cu(In,Ga)Se2 – The Influence of Rate Profiles on Film Morphology

Published:2001 Issue: Volume:668 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Bodegård M.,Kessler J.,Lundberg O.,Schöldström J.,Stolt L.

Abstract

ABSTRACTThe influence of the evaporation rate profiles on the microstructure of co-evaporated Cu(In,Ga)Se2, (CIGS), is discussed. The influence of Cu excess in the beginning of the CIGS growth has been investigated. In addition, the Ga rate has been varied in order to create bandgap grading in the CIGS film. By studying CIS and CGS films separately and as CGS/CIS stacks results on interdiffusion of In and Ga interdiffusion have been obtained. The resulting thin films are investigated mainly using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Solar cell devices were prepared and IV measurements performed on samples with varying CIGS deposition parameters.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

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