Luminescence Properties of Pulsed Laser Deposited Eu:Y2O3 Thin Film Phosphors on Sapphire Substrates

Abstract

AbstractEu:Y2O3 phosphor films were deposited on (0001) sapphire substrates using 248 nm KrF pulse laser to investigate microstructure-property correlations. A slow film growth (60 nm/min) process results in predominantly (222) orientation while a fast film growth (170 nm/min) process results in predominantly (400) orientation of Eu:Y2O3 film. With an increase in film thickness from 0.6μm to 1.2μm, a 300% increase in brightness has been achieved from Eu:Y2O3 films. An increase in substrate temperature during deposition from 700°C to 800°C resulted in ~40% brighter films. Improvement in brightness from Eu:Y2O3 films with the film thickness may be attributed to an increase in roughness while that from substrate temperature may be attributed to a combined effect of increased roughness and improved crystallinity.