Electrical Properties Of S+Implantation in Si GaAs

Abstract

ABSTRACTThe electrical properties of S+implanted in SI GaAs have been studied. The rapid diffusion and redistribution of S+implanted in GaAs after conventional thermal annealing (CTA) depends not on conventional diffusion of S+or VAs, but on the enhanced diffusion by ion implantation. By employing rapid thermal annealing (RTA) techniques enhanced diffusion can be restrained, redistribution of S+implantation can be decreased greatly and a thin active layer suitable for fabricating GaAs MESFET devices can be obtained.