Mechanism of Dose-Rate Dependence of Electrical Activation in Ion-Implanted GaAs

Abstract

ABSTRACTTo elucidate the mechanism of dose rate (DR) dependence of electrical activation, following two questions are investigated; why the amount of damage remaining after ion bombardment depends on DR and why it affects the electrical activation after high temperature annealing. From the observation that the DR dependence scales with temperature, the activation energy of recovery during ion irradiation has been estimated to be 0.75 and 1.0 eV. A higher DR suppresses the recovery and results in more damage, which in turn delays the electrical activation of implanted impurities.