Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

Abstract

ABSTRACTBy using rapid thermal annealing (RTA) we can obtain a me testable carrier concentration which well exceeds the solid solubility of arsenic dopant in silicon. The deactivation of such the supersaturated dopant, however, may result in relaxation of the metastable concentration. This paper describes lattice location of the deactivated arsenic atoms determined by channeling angular distribution. On the basis of the results for lattice site location the deactivation mechanism of supersaturated As in Si is discussed.