ESR Study of Fluorine Implanted a-Si:H and a-C:H Thin Films

Abstract

ABSTRACTThe study of ESR splitting effects induced by fluorine implantation into a-Si:H and a-C:H films has been performed. The implanted fluorine concentration Cp ranges from 1 × 1017 to 6 × 1021 cm−3. It is found that for both a-Si:H and a-C:H after fluorine implantation, in addition to the g1 resonances due to dangling bonds in the respective materials, there is a g2 resonance of g value close to 2.003 in both materials. This g2 resonance is further observed to be closely related to some doping effect of the implanted fluorine atoms in both materials. For a-C:H, it is also found that there is anisotropie hyperflne splitting (HFS) induced by the implanted fluorine atoms. These HFS signals exhibit unexpected peculiar CF dependence and do not show up at some intermediate CF values. A model based on the spin polarization effect has been proposed to attribute the HFS signals to be arisen from interaction between the π electrons of the carbon atoms and the 2p orbitals of the fluorine atoms.