Resistless Etching of SiO2 by Two Color Excimer Lasers

Abstract

AbstractResistless etching of thermal oxide silicon filmes were demonstrated by ArF & KrF excimer lasers, and CC12F2 gases. CC12F2 was decomposed by ArF excimer laser light, and CF2 radicals were produced. These radicals, which have absorption band nearby 250nm, were vary stable. Then the circuit pattarned KrF laser light was irradiated on the SiO2 in an atomsphere of CF2 radicals. As thse result, the etching pattern of 2 μ m width was performed.