Metal-Organic Chemical Vapour Deposition of II-VI Semiconductor Thin Films Using Single-Source Approach

Abstract

AbstractThin films of CdS and CdSe have been deposited on glass substrates by low pressure metal-organic chemical vapour deposition (LP-MOCVD) using Cd[(EPiPr2)2N]2 (E = S, Se) as single-source precursors. These air-stable precursors are volatile, making them suitable for the deposition of thin films. As-deposited films were crystalline metal chalcogenides, as confirmed by X-ray powder diffraction (XRD), and their morphologies were studied by scanning electron microscopy (SEM).