Author:
Bagsican Filchito Renee,Gonzales Jofferson,Zhang Xiang,Ma Lulu,Kawayama Iwao,Murakami Hironaru,Vajtai Robert,Ajayan Pulickel,Kono Junichiro,Tonouchi Masayoshi
Abstract
ABSTRACTWe applied laser THz emission spectroscopy to study the effects of monolayer graphene on the THz emission from InAs. THz emission from graphene/InAs varies linearly with the laser excitation power in the low-intensity excitation regime. We found that unlike in graphene/SI-InP junctions, graphene and O2 adsorbates on graphene have no significant effect on the THz emission from graphene/InAs junctions because the THz radiation mechanism in InAs is by the photo-Dember effect, whereas for SI-InP is by the surge current effect. There is also a slight enhancement in the THz emission from both bare InAs and graphene/InAs by UV illumination, which is probably due to the additional photoexcited carriers by UV that somehow enhances the photo-Dember field.
Publisher
Springer Science and Business Media LLC