Author:
Tabatabaei S. A.,Porkolab G. A.,Agarwala S.,Johnson F. G.,Merritt S. A.,King O.,Dagenais M.,Chen Y. J.,Stone D. R.
Abstract
ABSTRACTThis paper describes in detail a surface preparation, and post-etch removal
technique developed for InGaAs sidewalls. It illustrates the results
demonstrating the effect of sidewall post-etch, surface preparation, and
surface passivation on the performance of high speed InGaAs detectors. Dark
current density for circular diodes with a diameter size varying between 10
and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness
of various surface preparation techniques was studied by measuring the
immediate improvement in dark current density, as well as its long-term
stability. The benefits of this new technique compared to other techniques
we have investigated include improved device characteristics, long-term
stability, as well as a much less critical process to achieve optimum
surface properties.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Techniques for achieving low leakage current in dry etched InGaAs waveguide PIN detectors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
2. Conservation of low dark current of InGaAs photodiodes after NH/sub 3//HF etch with a BCB passivation layer;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)