Author:
Mori K.,Okada T.,Oguri K.,Nishi Y.
Abstract
ABSTRACTThe influence of sheet electron beam irradiation ( SEBI ) on the
water-wettability of the ( 100 ) plane on the Si wafer etched by
hydrofluoric acid ( HF ) is investigated. The wettability energy is
estimated from the contact angle of water. The SEBI treatment decreases the
contact angle and increases the interfacial energy. Aging decreases the
change in the interfacial energy. A rate process is inferred for the
interfacial energy changes on the Si wafer.
Publisher
Springer Science and Business Media LLC