Author:
Gonzales Simon,Grivna Gordy,McAfee Anda
Abstract
ABSTRACTCorrosion control and passivation of post metal etch structures are critical
for submicron applications and overall yield performance. This study focused
on 0.6 micron metal line spaces and the development of a process utilizing
an integrated metal etch, photoresist strip and passivation tool. Data
collected to characterize the corrosion/passivation mechanism included: veil
and photoresist strip chemistries, passivation steps, time delays,
subsurface material versus veil formation and electrical and defectivity
yield. A post metal etch process was tested and integrated into a
manufacturing environment that has provided minimal line loss, complete
removal of etch veils, robust corrosion control and substantial reduction of
intermetal shorts.
Publisher
Springer Science and Business Media LLC
Reference11 articles.
1. 7. Savas S. , Dutton D. , Woods B. , Guerra R. and Hammond M. , Solid State Technology, Oct.1996, 123–128.
2. 4. Pai P. and Chin C.H. , Microelectronic Manufacturing and Testing, Feb. 1990, 37–39.
3. Study of a Veil Structure and a Two-Step Corrosion Suppression Process in Al-Si-Cu Etching
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献