Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition

Abstract

ABSTRACTDirect writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.