Author:
Singh N. B.,Hopkins R. H.,Mazelsky R.,Gottlieb M.
Abstract
ABSTRACTGood quality single crystals of Ti3PSe4 were grown from the melt by the Bridgman technique following improvements in the method of purifying the parent components, and optimization of growth parameters. Crack-free crystals 8 cm in length and 17 mm in diameter were produced.The quality of the crystals was evaluated by optical transmittance and metallographic techniques. In the range 0.7 to 14 μm the optical transmittance shows elimination of absorption bands exhibited in crystals grown without special purification steps. Etchpit studies showed that the crystals were free from inclusions and lamellar twins and that they show a uniform cross sectional etch pit density.
Publisher
Springer Science and Business Media LLC