Author:
Sun ZhengMing,Hashimoto Hitoshi,Zhang ZheFeng,Yang SongLang,Abe Toshihiko
Abstract
ABSTRACTPowder mixtures of Ti/Si/C, Ti/SiC/C, Ti/Si/TiC, Ti/SiC/TiC and Ti/TiSi2/TiC were used for the synthesis of Ti3SiC2 by using a pulse discharge sintering (PDS) process. The Ti/Si/TiC powder was found to be the best among the five powder mixtures for the Ti3SiC2 synthesis. The highest content of Ti3SiC2 can be improved to about 99wt% at the sintering temperature of 1300°C for 15 minutes. The relative density of all the synthesized samples is higher than 98–99% at the sintering temperature above 1275°C. The nearly single phase Ti3SiC2 was found to show plastic deformation at room temperature and a good machinability. Both electrical and thermal conductivity were found to be more than two times of the value of a control pure Ti sample. The high-temperature mechanical tests confirmed that the Ti3SiC2 samples synthesized by the PDS process displayed a comparable performance with those fabricated by the other techniques.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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