Author:
Yonehara T.,Tihompson C.V.,Smith Henry I.
Abstract
ABSTRACTThe growth of large secondary grains with (112) texture, and solid-state agglomeration to single-crystal islands have been observed by annealing ultra-thin (less than 1000Å) films of Ge. A driving force proportional to surface-energy anisotropy and inversely proportional to film thickness is believed to be responsible for both phenomena. The temperature for agglomeration decreases with film thickness, and is further depressed by the presence of Sn vapor. Patterning Ge into stripes increases secondary grain size and population. Encapsulation with a film of SiO2 suppresses agglomeration and alters crystallographic texture. A surface-relief structure of 0.2μm period and 300Å depth induces a (100) texture in some cases, and alters the morphology of agglomerated islands.
Publisher
Springer Science and Business Media LLC
Reference15 articles.
1. Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven
2. 12. Yablonovitch E. and Gmitter T. , to be published, J. Electrochem. Soc.
3. 9. Thompson C.V. and Smith H.I. , submitted to Appl. Phys. Lett.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献