Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

Published:1994 Issue: Volume:341 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Bauer S.,Beckers L.,Fleuster M.,Schubert J.,Zander W.,Buchal Ch.

Abstract

AbstractThe growth of thin films of LiNbO3 and Er:LiNbO3 on LiNbO3 single crystals produced by pulsed laser deposition (PLD) was studied. Samples were characterized by RBS/Channeling Spectrometry, X-ray diffraction measurements, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) measurements. Film preparation is performed in a two-step process including deposition and in-situ-annealing. Buried Er doped layers of approx. 800 nm thickness were grown.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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