On the Interaction of Intrinsic and Extrinsic Gettering Schemes in Silicon

Abstract

ABSTRACTWe report some results of an experiment designed to study the interaction of extrinsic-gettering (EG) and intrinsic-gettering (IG) schemes. We found that mechanical abrasion introduces interstitial type dislocations into the wafer backside, and produces a concave wafer frontside. The EG dislocation network enhances SiO2 precipitation which is responsible for the IG activity. The enhancement is most significant near the wafer backside. The interaction arises most probably because the dislocation network serves as a very efficient source/sink for point defects.