Author:
Scott Martin P.,Caubin L.,Chen D. C.,Weber E. R.,Rose J.,Tucker T.
Abstract
ABSTRACTDeep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.
Publisher
Springer Science and Business Media LLC
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