Author:
Nygren Eric,Aziz Michael J.,Turnbull David,Hays James F.,Poate John M.,Jacobson Dale C.,Hull Robert
Abstract
ABSTRACTThe diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000°C under pressures up to 30 kilobars. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of ten. This diffusivity enhancement can be described by an average activation volume of -5.7±.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 eV to 3.6 eV at 30 kilobars
Publisher
Springer Science and Business Media LLC
Reference4 articles.
1. Apparatus for phase-equilibrium measurements at pressures up to 50 kilobars and temperatures up to 1750°C
2. [3] Aziz M. J. , Nygren E. , Hays J. F. , and Turnbull D. , to be published J. Appl. Phys. February 1985
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