Author:
Chang H. L. M.,Parker J. C.,You H.,xu J. J.,Lam D. J.
Abstract
AbstractTitanium and vanadium oxide thin films have been prepared in a cold wall low pressure MOCVD system for the study of MOCVD processing of epitaxial oxide films. Films were deposited on Si(111) and sapphire (0001) and (1120) at temperatures from 400 to 800°C. Processing parameter-structureproperty relationship was examined in detail and the result is presented.
Publisher
Springer Science and Business Media LLC
Reference4 articles.
1. Raman spectrum of anatase, TiO2
2. Raman Spectra of TiO2, MgF2, ZnF2, FeF2, and MnF2
3. [2] Parker J.C. , Chang H.L.M. , Xu J.J. , and Lam D.J. , this Proceedings.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献