Ferroelectric Properties and Crystalline Structures of BaMgF4 Thin Films Grown on Pt(111)/SiO2/Si(100)

Abstract

ABSTRACTCrystalline quality and ferroelectric properties of (120)-oriented BaMgF^BMF) films grown on Pt(111)/SiO2/Si(100) and n-Si(111) substrates have been investigated. The BaMgF4 films grown on Pt(111) have large and flat grains, while the films on Si(111) have small grains. The C-V curve of BaMgF4/Pt(111)/SiO2/Si(100) diodes showed a hysteresis loop with a memory window of 3.8V.