Author:
Thomas J. H.,Kaganowicz G.
Abstract
AbstractThin layers (100Å) of SiO were deposited at room temperature in a RF glow discharge in a nitrous oxige – silane ambient. Surface properties of the deposit were studied using quantitative and qualitative XPS and AES. Abrupt changes in the energy difference between the O 1s and Si 2p photoelectron peaks, the O/Si stoichiometric ratio, and nitrogen incorporation are observed with varying amounts of silane in the gas ambient (for a fixed nitrous oxide flow). The abrupt change in binding energy difference correlates with the presence of free oxygen in the glow discharge as measured by in-situ mass spectrometry. At silane flows below the abrupt change, nitrogen is excluded from the deposit and the surfaces appear to be chemically silicon dioxide with a O/Si ratio of 2.1 as determined from quantitative XPS analysis. Above the abrupt change, the films exhibit a surface composition of less than 2.0.
Publisher
Springer Science and Business Media LLC
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