Author:
Yamamoto Shigeru,Hikichi Takehito,Hamano Toshihisa
Abstract
ABSTRACTA New method of the low resistivity α-Ta deposition technique has been developed. The sputtered Ta film deposited on TaMo alloy has bcc structure (α-Ta) in contrast to tetragonal of the Ta mono layer (β-Ta), and shows the resistivity as low as 22μΩ cm. The mechanism of this transformation is not explained by simple epitaxial growth. X-ray diffraction analysis and RBS analysis indicated that the TaMo alloy layer, due to Mo diffusion from the under layer, acts as a seed plane of growth. The Ta/TaMo layered film is suitable for Large Area Electronic devices for its low resistivity.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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