Isothermal Capacitance Transient Spectroscopy for Deep Levels in Co- and Mn-doped ZnO Single Crystals-Reference-Cited by-同舟云学术

Isothermal Capacitance Transient Spectroscopy for Deep Levels in Co- and Mn-doped ZnO Single Crystals

Published:2002-06 Issue:6 Volume:17 Page:1529-1535
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Ohashi Naoki,Tanaka Junzo,Ohgaki Takeshi,Haneda Hajime,Ozawa Mio,Tsurumi Takaaki

Abstract

Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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