Parametric Study of Zone-Melting-Recrystallization Processing of Silicon on Insulator Structures

Abstract

ABSTRACTThe effects of four thermal parameters on the temperature distribution during Zone-Melting-Recrystalllzation processing of Slllcon-On-Insulator devices with graphite strip as the heat source were investigated numerically. Results indicate that the convective heat losses, the variability of the thermal conductivity of silicon as a function of temperature, and the multilayer nature of the structure do not affect the temperature distribution significantly. However, the velocity of the graphite strip can significantly affect the temperature distribution. The temperature profile remains the same for graphite strip velocities below 0.03 cm/sec. The relationship between required graphite strip temperature and velocity of the strip for film melting to occur is presented in graphical form.