Optimization of Cu(In,Ga)Se2 formation by regulating the stacked metal layers structure-the role of metallic growth-Reference-Cited by-同舟云学术

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Optimization of Cu(In,Ga)Se2 formation by regulating the stacked metal layers structure-the role of metallic growth

Published:2016-12-12 Issue:2 Volume:32 Page:363-369
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Wu Zhao,Lv Shoushou,Chen Wenli,Yan Genghua,Hong Ruijiang

Abstract

Funder

Department of Education of Guangdong Province

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films;Liu;J. Mater Sci: Mater Electron,2013

2. Effect of sputtering conditions of co-sputtered Cu–In–Ga precursors on Cu(InGa)Se2 photovoltaic absorber formation

3. Surface alloying of indium on Cu(111);Wider;J. Phys.: Condens. Matter,2003

4. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

5. Progress in chalcopyrite compound semiconductor research for photovoltaic applications and transfer of results into actual solar cell production

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