Novel Thin Film Light Emitting Diode Display Made Of Amorphous Silicon-Based Semiconductors

Abstract

AbstractA novel Thin Film Light Emitting Diode (TFLED) flat panel display was developed. The TFLED is a carrier injection-type electroluminescence and made of hydrogenated amorphous silicon-based semiconductor p-i-n junctions. The amorphous layers employed in this work are for example, a-Si1−xCx:H and a-Si1−xNx:H. The TFLED has two basic structures; 1) glass substrate/ITO/amorphous p-i-n layers/Al and 2) metal sheet substrate amorphous n-i-p layers/ITO. The typical thicknesses of the amorphous p-i-n layers are 150 Å, 500 Å and 500 Å, respectively. The color of the emission can be changed from red to white-blue by increasing the optical energy gap (2.5−3.5 eV), that is the atomic fraction x, in the i-layer. The brightness of the TFLEDs are of the order of 1–10 cd/m2 with injection current density of 100–1000 mA/cm2 and applied voltage of 8–15 V.