Magnetization Process in Cr Substituted Diluted Magnetic Semiconductor Films

Abstract

AbstractCr substituted dilute magnetic semiconductor Cd1-xCrxSe films were grown onto fused silica and sapphire (00 · 1) substrates by vapor deposition technique. The films with wurtzite structure were obtained at composition of 0 ≤ × ≤ 0.66. Saturation magnetization and magnetic susceptibility increased as x increased. In comparison with Mn-DMS system, the initial magnetization curves saturate easily. This tendency is different from most DMS materials in which magnetic ions interact with each other antiferromagnetically. It is possible that ferromagnetic interactions exist in Cd1-xCrxSe.