Wide Bandgap Semiconductor Power Devices-Reference-Cited by-同舟云学术

Wide Bandgap Semiconductor Power Devices

Published:1997 Issue: Volume:483 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Chow T. P.,Ramungul N.,Ghezzo M.

Abstract

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference39 articles.

1. 8. Ramungul N. , Chow T.P. , Ghezzo M. , Kretchmer J. , and Hennessy W. , Device Research Conference, Paper III.A-3, pp.56–58, 1996 (unpublished).

2. 13. Rymazewski E.J. , Materials Research Society Fall Meeting, 1996.

3. 27. Patel R. , et al. (unpublished).

4. 38. Rao M.V. , et al., Int'l Conf. on Silicon Carbide, III-nitrides and Related Materials – ICSCIIIN-97, Abstracts, 73, 1997 (unpublished).

5. 19. Neudeck P. and Larkin D.J. , Device Research Conference, Late News Paper III.B-5, 1996 (unpublished).

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