Characterization Of sic Layer Formed by C Ion Implantation ( ESR And IR Studies)

Abstract

ABSTRACTCharacterization of C ion implanted silicon layers were performed by fourier transformation infrared ( FT-IR ) spectroscopy and electron spin resonance ( ESR ) methods. Microcrystalline β-SiC including amorphous Si are formed in the Si surface region by annealing at 1200 °C following hot ( 450 °C ) implantation. The ESR analysis revealed the presence of two kinds of defect centers in SiC layer formed by implantation, i.e. Si dangling bond ( g=2.0060, ΔHpp=6 Oe) in the amorphous Si and Si dangling bond with C atom neighbors ( g=2.0032, ΔHpp=3 Oe). Heating substrate during implantation prevents the formation of carbon clusters on the Si surface.