Atomic Layer CVD for Continuously Shrinking Devices-Reference-Cited by-同舟云学术

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Atomic Layer CVD for Continuously Shrinking Devices

Published:2000 Issue: Volume:612 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Haukka Suvi,Elers Kai-Erik,Tuominen Marko

Abstract

AbstractThis paper will review the basics of the atomic layer chemical vapor deposition (ALCVD) thin film growth technique. The emphasis is on the ALCVD metal nitride growth and dual damascene barrier requirements.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

1. 11. Elers K.-E. , Saanila V. , Soininen P. and Haukka S. , unpublished results.

2. Atomic Layer Epitaxy Growth of TiN Thin Films from Til4 and NH 3

3. 13. Iiskola E. , personal communication.

4. 4. Haukka S. , Tuominen M. and Ernst Granneman, paper presented in High-k Dielectrics Session organized by Semieducation on the 5th of April, 2000 in Munchen.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The growth and diffusion barrier properties of atomic layer deposited NbNx thin films;Thin Solid Films;2005-11

2. Atomic Layer Deposition of Molybdenum Nitride Thin Films for Cu Metallizations;Journal of The Electrochemical Society;2005

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