Density of States in Tritiated Amorphous Silicon Measured Using CPM

Abstract

ABSTRACTThe constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the conduction band edge, suggesting that the main type of defect present in the films was a doubly occupied dangling bond. The concentration of defect states increases as a result of tritium decay by about two orders of magnitude over a period of 500 hours. The defect density in the tritiated amorphous silicon samples could be reduced by thermal annealing, after which it increased once more.