Epitaxial Growth of (100) GaAs on SOS using a Specifically Designed MOCVD System

Abstract

AbstractHigh quality (100) single domain GaAs layers are epitaxially grown on slightly misoriented (100) Si-on-(1102) sapphire(SOS) substrates by MOCVD. Epitaxial growth on a spherical SOS substrate reveals that R face (1102) should not be tilted toward C axis [0001], but toward [011] or [011] of Si. A new MOCVD system which has two reactors, one for Si cleaning, the other for GaAs deposition, is effective to obtain mirrorlike smooth surface. The X-ray FWHM of 10µm GaAs was reduced to 65 arcsec by the thermal cycle annealing.A crack free 15 µm thick GaAs layer with a dislocation density of 3×106cm-2 is obtained by combining the thermal cycle annealing and the strained-layer superlattices.