Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

Abstract

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.