MeV Ion Implantation of Er into LiNbO3

Abstract

ABSTRACTThe incorporation of Er into LiNbO3 is of great interest for fabricating waveguide lasers and amplifiers. We compare Er diffusion data with the results of Er implantation, performed at 3.6 MeV energy. Even after annealing for 4h at 1060°C, the resulting Er profiles display very good matching to the optical modes. The results of a theoretical gain estimate are presented.