A Study of FeAl/AlAs/GaAs Interfaces Using Moiré-Fringe Contrast in a Transmission Electron Microscope

Author:

Angelo J. E.,Kuznia J.N.,Wowchak A.M.,Cohen P. I.,Gerberich W. W.

Abstract

ABSTRACTThis paper describes the transmission electron microscope (TEM) investigations of the defect structure present at various FeAl/AlAs/GaAs interfaces. Although a systematic study has not yet been completed it is shown that by changing the growth temperature from 200°C to 300°C the growth morphology changes significantly. In-situ RHEED studies show the growth mode changes from layer-by-layer to island-like when the growth temperature is increased. TEM in both plan-view and cross-sectional modes is used to confirm these results. It is found that by increasing the growth temperature from 200°C to 300°C the growth mode switches from layer-by-layer (2D) with a continuous FeAl film, to island-like (3D) with significant numbers of “pin-holes”. A Moiré-fringe analysis is applied to determine the Burgers vector of the misfit dislocations. In both cases the interface between the FeAl and AlAs consists of a grid of misfit dislocations with [100] and [010] line directions whose Burgers vectors are [010] and [100] respectively.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

1. 14. Angelo J.E. , Wowchak A.M. , Cohen P.I. , and Gerberich W.W. (unpublished).

2. Dynamical theory of moire fringe patterns

3. 9. Wowchak A.M. , PhD thesis, University of Minnesota, 1990.

4. Characterization of the CoGa/GaAs interface

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