A Study of FeAl/AlAs/GaAs Interfaces Using Moiré-Fringe Contrast in a Transmission Electron Microscope
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Published:1990
Issue:
Volume:202
Page:
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ISSN:0272-9172
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Container-title:MRS Proceedings
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language:en
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Short-container-title:MRS Proc.
Author:
Angelo J. E.,Kuznia J.N.,Wowchak A.M.,Cohen P. I.,Gerberich W. W.
Abstract
ABSTRACTThis paper describes the transmission electron microscope (TEM) investigations of the defect structure present at various FeAl/AlAs/GaAs interfaces. Although a systematic study has not yet been completed it is shown that by changing the growth temperature from 200°C to 300°C the growth morphology changes significantly. In-situ RHEED studies show the growth mode changes from layer-by-layer to island-like when the growth temperature is increased. TEM in both plan-view and cross-sectional modes is used to confirm these results. It is found that by increasing the growth temperature from 200°C to 300°C the growth mode switches from layer-by-layer (2D) with a continuous FeAl film, to island-like (3D) with significant numbers of “pin-holes”. A Moiré-fringe analysis is applied to determine the Burgers vector of the misfit dislocations. In both cases the interface between the FeAl and AlAs consists of a grid of misfit dislocations with [100] and [010] line directions whose Burgers vectors are [010] and [100] respectively.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference14 articles.
1. 14. Angelo J.E. , Wowchak A.M. , Cohen P.I. , and Gerberich W.W. (unpublished).
2. Dynamical theory of moire fringe patterns
3. 9. Wowchak A.M. , PhD thesis, University of Minnesota, 1990.
4. Characterization of the CoGa/GaAs interface
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