Structural, Optical and Electrical Properties of <P> μc-Si:H Very Thin Films Deposited by the VHF-GD Technique-Reference-Cited by-同舟云学术

Structural, Optical and Electrical Properties of

μc-Si:H Very Thin Films Deposited by the VHF-GD Technique

Published:1994 Issue: Volume:336 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Flückiger Roger,Meier J.,Shah A.,Catana A.,Brunel M.,Nguyen H. V.,Collins R. W.,Carius R.

Abstract

ABSTRACTIn this paper we present new results for very thin <p> μc-Si:H films (< 350 Å) deposited at low temperature (170 C) by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. First, the effect of boron doping on the growth and electrical properties of μc-Si:H very thin films is investigated, leading to an optimised value of about 0.6 % (B2H6/SiH4). Structural properties of an optimised thickness series ranging from 100 to 350 Å are studied using TEM, Raman, grazing angle X-ray diffraction/reflection and spectroscopie ellipsometry. Further, a columnar structure growth model for these very thin <p>-type μc-Si:H films will be proposed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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