Hole Drift Mobility in a-Si1−xCx:H

Abstract

ABSTRACTWe present a summary of our recent measurements on hole drift mobilities in hydro-genated amorphous silicon-carbon alloys (a-Si1−xCx:H). Increasing the bandgap has a vastly smaller effect for the hole mobility than for electrons. In conjunction with previous drift Mobility Measurements in a-Si1−xCx:H and a-Si1−xGex:H, these hole measurements complete a simple pattern for the effects of bandgap modification on drift Mobilities: electron mobilities decline as the bandgap is increased beyond 1.72 eV or decreased below 1.72 eV, but hole mobilities are relatively unaffected.