Post Implantation Treatment of Silicon Carbide-Based Sensors for Hydrogen Detection Properties Enhancement

Abstract

AbstractPalladium ion implantation was performed at energies of 35 keV, 50 keV and 100 keV, at both room temperature (RT) and 500 °C, on two identical sets of 6H, n-type silicon carbide samples. Then, one set of samples was subjected to a post-implantation sputtering process, in order to eliminate the substrate layer damaged by the palladium ions during implantation. Electrical and micro-Raman measurements have been performed on both sets of samples, aiming for a better understanding of the chemical processes that take place in the presence of hydrogen atmosphere in the chemical sensors prepared this way.