Effects of ArF Excimer Irradiation on Multi-Energy Ge and Se Ion Implanted Silica

Abstract

AbstractSilica samples were implanted at multiple energies with Se and Ge ions producing implanted layers ~ 2.4 µm in depth starting at ~ 0.5 µm below the surface. In each case, the concentration of implanted species was ~ 0.05 atomic %. The optical absorption of the samples was measured from 2.7 to 6.5 eV. In all spectra, local maxima at 5.0 eV with shoulders at 5.9 eV were observed. The spectra have been assumed to be describable as a superposition of Gaussian absorption bands with mean energies taken from the literature of 4.8, 5.01, 5.17, 5.88, and 7.15 eV. The relative strengths of each of these bands have been obtained by linear regression. These fits show that additional bands at 3.7 and 6.4 eV are required to fit the data for the Se samples, while bands at 5.54 and 6.4 eV are needed to fit the data for the Ge samples.