Properties and Applications of Molecular Beam Epitaxial Silicides

Abstract

ABSTRACTTransition metal silicides are now being used as essential and integral elements of microelectronics technology. Epitaxial growth and deposition provide additional flexibility for many device and circuit applications.In this paper, various epitaxial growth techniques, namely solid phase epitaxy and molecular beam epitaxy are reviewed. The resulting morphology, crystallinity, and Schottky barrier heights as well as deep-level defects are contrasted. The parallel and perpendicular strains as a function of film thickness is reported.Application of the epitaxial silicide in improving conventional integrated circuits as well as in fabricating new devices are discussed.