Low Temperature Crystallization of PbTiO3 Thin Film by Excimer Laser Irradiation

Abstract

AbstractLowering the fabrication temperature for ferroelectric films is very important not only for silicon monolithic circuits but also for various substrates. Amorphous PbTiO3 thin films were prepared on glass substrates using ArF pulsed laser deposition (PLD). They were subsequently treated by a laser-induced phase transformation technique to achieve a perovskite structure. After irradiation by an ArF pulsed laser with an energy density 50mJ/cm2 in air, the films crystallized into the perovskite structure. It was possible to maintain the substrate at room temperature during the whole fabrication process. The structure, morphology and composition of the films were characterized by X-ray diffraction diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX), respectively. The surface of film irradiated with a laser was often rather rough and peeled off everywhere. It was necessary to control the number of laser pulses to avoid damaging the films. The effects of chemical composition and fabrication temperature are also discussed.