Author:
Stannowski B.,Veen M.K. van,Schropp R.E.I.
Abstract
ABSTRACTWe present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.
Publisher
Springer Science and Business Media LLC
Cited by
6 articles.
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